English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (2M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | 2ns |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25AA160A-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
24AA64-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
AS7C32096A-20TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
SST26VF080AT-104I/MFRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8WDFN |
|
93C66AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |
|
IS46R16320E-5TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
71V3577S80BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V632S6PFG8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
S25FL132K0XMFI041Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
MT48LC4M16A2P-6A IT:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT25320B-XHL-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
|
S70FL01GSAGMFI013Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
AT24HC02C-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
