类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 512Mb (16M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | 5.5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1372D-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AS7C31026B-12TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
71V67603S150BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1318CV18-250BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AM27S07A/B2ARochester Electronics |
STANDARD SRAM, 16X4, 30NS |
|
CAT28C256NI15Rochester Electronics |
IC EEPROM 256KBIT PAR 32PLCC |
|
IS43TR16128C-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
71V3557S75PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43DR81280C-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
MT25QU128ABA1EW9-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
FT24C128A-ETR-TFremont Micro Devices |
IC EEPROM 128KBIT I2C 8TSSOP |
|
S25FL256LAGNFV011Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
M95128-RMC6TGSTMicroelectronics |
IC EEPROM 128KBIT SPI 20MHZ 8MLP |