English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS25WP064A-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
IS42S86400F-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
25LC020AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
MX66U51235FMI-10GMacronix |
IC FLASH 512MBIT SPI/QUAD 16SOP |
|
24LC64T-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TDFN |
|
TE28F008BVT90Rochester Electronics |
8M-BIT FLASH MEM, PARALLEL |
|
CAV93C66VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IS61WV6416BLL-12BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
IS42S16160G-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29GL512S10DHSS50Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
BR24G64FVT-3GE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 8TSSOP |
|
GS84018CGT-250IGSI Technology |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C25702KV18-550BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
