English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HyperFlash™ KL |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 96 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-VBGA |
| 供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M24C04-RMC6TGSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8MLP |
|
IS43LR32640A-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 90WBGA |
|
CY62256L-70SNXCTRochester Electronics |
IC SRAM 256KBIT 70NS 28SOIC |
|
CY7C1415KV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1570KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
W9712G6KB-25Winbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 84TFBGA |
|
CAT24C32WI-GT3JNRochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
S29GL256N11TFA013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
S-93C56BD0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 2MHZ 8SOP |
|
AS7C256A-20JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
LE25U40CMC-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH 4MBIT SPI 40MHZ 8SOPJ |
|
93LC46C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
IS49NLS96400A-25WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144TWBGA |
