类型 | 描述 |
---|---|
系列: | HyperFlash™ KL |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 96 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S26KL256SDABHB030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
70T3519S133BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
93AA56CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOP |
|
IS62LV256AL-20JLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
S29GL01GT11FHIV10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
AT45DB161E-MHD-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8UDFN |
|
24AA1026-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
AS7C1025B-10TJCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
24LC02B/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY27C512-200QMBRochester Electronics |
UVPROM, 64KX8, 200NS CQCC32 |
|
MX25L3239EM2I-10GMacronix |
IC FLASH 32MBIT SPI 104MHZ 8SOP |
|
11AA080-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8SOIC |
|
S29GL512T10TFI013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |