类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61C1024AL-12HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
IS42VM32100D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
CY7C1020DV33-10ZSXITRochester Electronics |
IC SRAM 512KBIT PAR 44TSOP II |
|
CYD09S18V18-167BBXIRochester Electronics |
IC SRAM 9MBIT PARALLEL 256FBGA |
|
S25FS064SDSMFV010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
CY7C1313CV18-200BZXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS61C5128AL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
24LC256T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIJ |
|
S25FL256SAGNFI003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IS61WV12816DBLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1320CV18-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
71V3577YS75PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
RM25C64DS-LTAI-BAdesto Technologies |
IC CBRAM 64KBIT SPI 20MHZ 8TSSOP |