English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8, 1K x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| 供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W94AD2KBJX5E TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
M24C64S-FCU6T/TSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP |
|
IS62WV20488FBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
S25FL256SDPMFV011Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY7C1420SV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS49NLC93200-33WBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144TWBGA |
|
S29GL256S10DHV020Rochester Electronics |
FLASH, 16MX16, 100NS, PBGA64 |
|
23A512T-E/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
CY62148DV30LL-70BVXIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
CY14B108M-ZSP45XITCypress Semiconductor |
IC NVSRAM 8MBIT PAR 54TSOP II |
|
FM24C64FM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
47C16-I/STRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8TSSOP |
|
71256SA12YRochester Electronics |
SRAM 256K (32K X 8-BIT) |
