类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 512Kb (64K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C192-45VCRochester Electronics |
STANDARD SRAM, 64KX4, 45NS |
|
AT45DB081E-SSHNHA-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |
|
CY7C1373KV33-100AXCCypress Semiconductor |
NO WARRANTY |
|
MT29F1G01ABAFD12-AAT:F TRMicron Technology |
IC FLASH 1GBIT SPI 24TBGA |
|
23A640-I/STRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8TSSOP |
|
DS2502G+T&RMaxim Integrated |
IC EPROM 1KBIT 1-WIRE 2SFN |
|
24C02CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DFN |
|
GS84036CGT-250IGSI Technology |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
DS24B33S+Maxim Integrated |
IC EEPROM 4KBIT 1-WIRE 8SO |
|
W988D6FBGX7E TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
CY7C1024AV33-12BGCRochester Electronics |
STANDARD SRAM, 128KX24 |
|
S29GL064S70TFI063Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
93AA46A-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |