English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8, 128 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| 供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC66C-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8DIP |
|
CY62136VNLL-70ZSXERochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AT28C256E-20DM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
M24C32-DRDW3TP/KSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 8TSSOP |
|
MT58L64L32FT-7.5Rochester Electronics |
CACHE SRAM 64KX32 7.5NS PQFP100 |
|
IS43TR16256B-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
MR3A16AYS35REverspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 54TSOP2 |
|
CY7C1318CV18-200BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AT28HC256-12FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
MT28EW01GABA1HPC-0SIT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 64LBGA |
|
AS7C32096A-20TCNTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
GS8342T36BGD-300IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
S29GL128S90FHSS63Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
