类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 36Mb (2M x 18) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S32800J-75EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IS34MW01G164-BLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
S40410081B1B1I000Rochester Electronics |
FLASH, 8GX8, PBGA153 |
|
S25FL256LAGBHB023Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
AS7C1026C-15TINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
AT25SF081-MAHF-TAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8UDFN |
|
CY27C010-120JCRochester Electronics |
OTP ROM, 128KX8, 120NS PQCC32 |
|
CYD09S18V18-200BBXIRochester Electronics |
IC SRAM 9MBIT PARALLEL 256FBGA |
|
FM24CL16B-GTRCypress Semiconductor |
IC FRAM 16KBIT I2C 1MHZ 8SOIC |
|
MR25H128AMDFEverspin Technologies, Inc. |
IC RAM 128KBIT SPI 40MHZ 8DFN |
|
24C65/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
24AA08T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
70V3599S133BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |