类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24CW320T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C SOT23-5 |
|
24LC512T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
QS7025A-55JRochester Electronics |
MULTI-PORT SRAM, 8KX16, 55NS |
|
MX29LV800CBXEI-70GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
IS61LPS51218A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT48LC2M32B2B5-7 IT:G TRMicron Technology |
IC DRAM 64MBIT PARALLEL 90VFBGA |
|
DS1245AB-70Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
N02L63W2AB25ISanyo Semiconductor/ON Semiconductor |
IC SRAM 2MBIT PARALLEL 48BGA |
|
IDT71V416VL10PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT45DB011B-XIRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 20MHZ 14TSSOP |
|
CY62256VNLL-70ZRXITCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
AT25DN011-MAHFGP-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8UDFN |
|
MT29F512G08CFCBBWP-10M:BMicron Technology |
IC FLASH 512GBIT PAR 48TSOP I |