English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-FBGA (6x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V256S10YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AT49F001NT-12PCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
MT28EW128ABA1HPC-1SIT TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64LBGA |
|
CY62128BLL-70SCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
IS63LV1024L-10KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS45S16800E-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
IDT71T75902S80BGG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
7016L20PFIRenesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
IS61NLP51236-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
7005L15PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
AT24C128W-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
MT28F400B3SG-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
|
IS65WV25616DBLL-45CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
