类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - DDR2 |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.88 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H8M32LFB5-6:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
CAT28F010HI12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
70V9179L9PFI8Renesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
70V639S12PRF8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 128TQFP |
|
IDT71T75602S200BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
R1WV3216RBG-7SI#S0Renesas Electronics America |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
R1LV1616RSA-5SI#B0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
MT40A512M16JY-083E AAT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
93C76AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
AT24C16AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8MAP |
|
70V3389S5PRFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
IS42S32800B-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
S29PL032J70BAW120Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |