类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.6V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP-T |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7005L35PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MT29F1G08ABBDAH4-ITX:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT29F4G01AAADDHC:DMicron Technology |
IC FLASH 4GBIT SPI 63VFBGA |
|
AT49BV002AN-70TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
70V9279S15PRF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
IDT71T75802S166PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
RD48F3000P0ZBQEAMicron Technology |
IC FLASH 128MBIT PARALLEL 88SCSP |
|
CY7C09379V-12AXCTCypress Semiconductor |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
LH5164AN-10LSharp Microelectronics |
IC SRAM 64KBIT PARALLEL 28SOP |
|
DS28E10P-W26+1TMaxim Integrated |
IC EPROM 224B 1-WIRE 6TSOC |
|
AT28LV010-20JARoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
70V35L15PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
M58LT128HST8ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 80LBGA |