English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.3V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT47H128M8JN-3 IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
70V7519S133DRIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
AT24C128-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DIP |
|
IS43LD16640A-3BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
MT46V64M8TG-75Z:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT41J128M16HA-187E:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
JS48F4400P0TB00AMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT93C66-10PCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
MT45W1MW16BAFB-708 WT TRMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
AT28BV64-25JCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
IS42S32400E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AS4C128M16D3L-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT24C16AN-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
