English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70261L15PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
CY62177DV30LL-55BAXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
AT28BV64-30SCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MT48LC16M16A2P-75:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
SST49LF016C-33-4C-EIE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 40TSOP |
|
AT27C040-90RCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32SOIC |
|
71321SA35TF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
IS42SM32800E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IDT71V3557SA80BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT41K256M8DA-107 IT:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
IS61LV12824-10TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 3MBIT PARALLEL 100TQFP |
|
JS28F00AP30TFAMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS61NLP25636A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
