类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.300", 7.62mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71321SA20PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT28C010E-20JIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
N25Q512A13G1241EMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
IS61LPS12836A-200B2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16160B-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
BR93G76FJ-3BGTE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 3MHZ 8SOP |
|
CAT28C256G-15TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PAR 32PLCC |
|
IS42S83200B-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71024S20TYI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
93LC56CT-E/SN15KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
IDT71V432S7PFG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CY7C192-15VXCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IDT71V67903S75PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |