类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-WBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W631GU8KB15IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
MT40A256M16GE-083E AIT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
70V631S12PRFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
IS42S16800F-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
MT29F64G08AJABAWP:B TRMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
CY7C1472BV33-167BZCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT47H32M16BN-3 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT29F2G08ABAEAWP-AT:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
IS66WV51216BLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PAR 48MINIBGA |
|
S29GL256P90FAIR12Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AT25160AN-10SU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
IDT71V3577SA85BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
RD48F3000P0ZTQ0AMicron Technology |
IC FLASH 128MBIT PARALLEL 88SCSP |