English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S30MS512R25TFW000Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
IS61C6416AL-12TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT49BV1614AT-90TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AS4C2M32S-5TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
M29W400FB55N3F TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
W9812G6JH-5Winbond Electronics Corporation |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C09269V-6AXCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
71421LA55J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS65WV25616DBLL-45CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V3557SA85BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT29F128G08CBCCBH6-6R:CMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
IS42S32400B-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
JS28F256P30T95AMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
