English
简体中文
RES CHAS MNT 130 OHM 1% 10W
CAP CER 1000PF 50V C0G/NP0 2225
TVS DIODE 6.5V 11.2V DO201
IC DRAM 8GBIT PARALLEL 96LFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 8Gb (512M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-LFBGA |
| 供应商设备包: | 96-LFBGA (10x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7009L15PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
70125S55JRenesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
7140SA35J8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS61C632A-7TQ-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IS46TR16256A-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
AT49LV040-70JIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
PC28F00BP33EFAMicron Technology |
IC FLASH 2GBIT PAR 64EASYBGA |
|
CAT25256VI-GT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KB SER SPI 8SOIC |
|
AT24C32W-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
W25Q128FWBIGWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
NM27C040V200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
24LC32AT-I/SNGRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
IS41LV16105B-50KLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |