类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 576Mb (32M x 18) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | - |
访问时间: | 15 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 144-TFBGA |
供应商设备包: | 144-FBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95160-DWDW4TP/KSTMicroelectronics |
IC EEPROM 16KBIT SPI 8TSSOP |
|
MT41J128M16HA-15E AIT:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
W25Q128JVSJMWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
AT28C64-25TCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
W25Q128JVPJQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
RC28F128J3D75AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
AT27C010-15JIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
N25Q256A73ESF40GMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
JS28F128M29EWHFMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
S34MS02G200GHV003SkyHigh Memory Limited |
IC FLASH 2G PARALLEL |
|
IS61NLF51236-7.5TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V3576S133PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M25PX80-VMN3TPB TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |