类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 55 ns |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7005S35PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
IDT71V424L15PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29AL008J70BFN023Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
W632GG8AB-15Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
CY7C1021CV33-8ZXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
W25Q256FVFIGWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
M58LT256JSB8ZA6EMicron Technology |
IC FLASH 256MBIT PARALLEL 80LBGA |
|
IDT71V25761S200PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT47R64M16HR-25E:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AT49F512-70JIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
IDT71V65903S85PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT28C256L15Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
AT27LV020A-15TIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |