类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71T75902S80BGGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AT27C010-15TCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
IDT71V256SA10YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS42S32200C1-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
MTFC8GLDDQ-4M IT TRMicron Technology |
IC FLASH 64GBIT MMC 100LBGA |
|
PC28F640P30B85EMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
MT46V16M16TG-75 L:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS61NVF102418-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
W25Q32JVTCJM TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
FM25V01-GCypress Semiconductor |
IC FRAM 128KBIT SPI 40MHZ 8SOIC |
|
JS28F512P30EF0Micron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT27C080-90TURoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32TSOP |
|
CY7C106D-10VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 28SOJ |