English
简体中文
IC DRAM 512MBIT PARALLEL 84WBGA
CAP FILM 4700PF 5% 600VDC RADIAL
M83513/03-E03N, MCKS-N1-B-31P6G9
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 400 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-WBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S16100C1-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
MT53E384M32D2DS-046 AAT:EMicron Technology |
IC DRAM 12GBIT 2.133GHZ 200WFBGA |
|
W25Q16DVUZIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
AT25010N-10SCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
71V432S6PFGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
7005L20PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
GD5F4GQ4RCYIGYGigaDevice |
IC FLASH 4GBIT SPI/QUAD 8WSON |
|
DS1258Y-100#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
AT25SF041-XMHD-TAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8TSSOP |
|
S29AL016J55FFA023Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 64FBGA |
|
AT28BV16-25PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
AT24C256-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DIP |
|
MT47H64M16HR-3:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |