English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | StrataFlash™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8, 8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 75ns |
| 访问时间: | 75 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-TBGA |
| 供应商设备包: | 64-EasyBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M27C256B-12B1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28DIP |
|
W25P20VSNIGWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 40MHZ 8SOIC |
|
MT29F1T208ECCBBJ4-37ES:B TRMicron Technology |
IC FLASH 1.125T PAR 132VBGA |
|
AT28HC256-90SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
MT28F128J3RP-12 METMicron Technology |
IC FLASH 128MBIT PAR 56TSOP I |
|
CAT24C32YI-GT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 8TSSOP |
|
7016L15PFRenesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
70V38L20PFIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
STK17T88-RF45TRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48SSOP |
|
W632GG8MB-11 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IDT71V416YL12YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AS4C128M16MD2-25BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 134FBGA |
|
IS43TR16640BL-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
