类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16800E-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS42S32400D-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT27LV256A-70TIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
M29F400BB90N6Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
IDT70825S35PF8Renesas Electronics America |
IC RAM 128KBIT PARALLEL 80TQFP |
|
M27C256B-15F1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
CY7C019-15ACCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
|
MT48LC4M16A2P-6A AAT:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
R1LV0108ESA-5SR#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
IS46TR16640BL-125JBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
M27C256B-10F1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
M25PE80-VMW6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
IDT71V416S10Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |