类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Quad Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 128-LQFP |
供应商设备包: | 128-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL127SABNFV103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
70V3599S133DRIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
RM24C128A-BSNC-TAdesto Technologies |
IC CBRAM 128KBIT I2C 1MHZ 8SOIC |
|
M24512-WMN6PSTMicroelectronics |
IC EEPROM 512KBIT I2C 1MHZ 8SO |
|
AT24C02-10TI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
AT49F001AN-55JURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
W25Q16FWZPIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
MT46V32M8TG-6T:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS43TR16640B-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
70V9089L9PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
70V9079S9PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AS4C8M32S-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
M27C1001-15B1STMicroelectronics |
IC EPROM 1MBIT PARALLEL 32DIP |