English
简体中文
CAP CER 0.1UF 50V Y5V 0805
IC FLASH 32MBIT SPI 108MHZ 8SO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 32Mb (8M x 4) |
| 内存接口: | SPI |
| 时钟频率: | 108 MHz |
| 写周期时间 - 字，页: | 8ms, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V424S10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT40A256M16GE-083E AUT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT28F400B5WG-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
70V35S25PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
IS42S83200B-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT48LC128M4A2TG-7E:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT46V64M8P-75Z:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT28F800B5SG-8 BMicron Technology |
IC FLASH 8MBIT PARALLEL 44SOP |
|
MT48LC16M8A2P-75IT:GTRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1518JV18-300BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C64E-12PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
AT27C256R-45PIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28DIP |
|
SST25VF020A-25-4C-ZAERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 25MHZ 8CSP |