English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-CDIP (0.300", 7.62mm) |
| 供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC66A-I/SN15KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
25LC080CT-E/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
CY7C1324H-133AXCTCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
MT41J128M8JP-15E:GMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
24FC64FT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8MSOP |
|
DS2045W-100#Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 256BGA |
|
AT34C02CY6-YH-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8MINI MAP |
|
MT46V64M8BN-75 IT:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT29E128G08CECDBJ4-6:DMicron Technology |
IC FLSH 128GBIT PARALLEL 132VBGA |
|
IS61LF51236A-6.5B2IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AT49BV002-12JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT93C56W-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
IS61LF204818A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100TQFP |
