English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M29F200FT5AN6F2 TRMicron Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
MT46V64M8TG-75 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT71V35761S166PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT41K256M16LY-107:NMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT24C256W-10SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
IDT71V67703S80PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT29LV512-12TURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V416YS10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT25080B-TH-BRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP |
|
W632GG8KB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
MT40A256M16GE-075E AAT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS25WD020-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI 80MHZ 8WSON |
|
7005S25PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
