类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 85ns |
访问时间: | 85 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 32-DIP Module (0.600", 15.24mm) |
供应商设备包: | 32-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1EX24032ASAS0I#S0Renesas Electronics America |
IC EEPROM 32KBIT I2C 400KHZ 8SOP |
|
CAT25256LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 20MHZ 8DIP |
|
CY7C1462SV25-200AXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
SST39WF1601-70-4C-MBQE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
AS4C8M16D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
|
AT29C512-70TURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
AT45DB041B-TI-2.5Roving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 15MHZ 28TSOP |
|
IS49NLS18160-33BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
MT47H128M8HQ-3:E TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
AT25640B-SSPDGV-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 5MHZ 8SOIC |
|
AT28C16E-20PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
IS41C16100C-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
M28W320CT90N6STMicroelectronics |
IC FLASH 32MBIT PARALLEL 48TSOP |