类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 576Mb (16M x 36) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 10 ns |
电压 - 电源: | 1.28V ~ 1.42V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 168-TBGA |
供应商设备包: | 168-BGA (13.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28HC256E-90PURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IS42S32200C1-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90BGA |
|
70V18L20PFIRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
AT93C46W-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
MT48LC4M32LFB5-10:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IDT71256TTSA15Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
S25FL064P0XMFI003MCypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
IS62WV5128DBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
IS43TR16256A-107MBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IDT71V65903S85PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7143LA55PF8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
LH28F008SAT-85Sharp Microelectronics |
IC FLASH 8MBIT PARALLEL 40TSOP |
|
IS66WVE1M16BLL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PARALLEL 48TFBGA |