类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-CABGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V432S5PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT46V64M8TG-5B IT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT71V256SA20PZRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
IS43DR16128A-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |
|
AT45DB011D-SH-SL954Adesto Technologies |
IC FLASH 1MBIT SPI 66MHZ 8SOIC |
|
MT48H8M32LFB5-75:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
IS29GL512S-11DHB02-TRCypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
IS46TR85120BL-107MBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
CY7C185-15VICypress Semiconductor |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
BR24L32-WROHM Semiconductor |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
W631GU6MB12JWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
W25Q32FWSSIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
AT25020N-10SCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |