类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 8Gb (2G x 4) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 13.5 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TA) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (9x13.2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1418KV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT47H128M4CB-37E:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT29C256-12JI-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
IDT71V25761YSA166BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MTFC2GMVEA-L1 WTMicron Technology |
IC FLASH 16GBIT MMC 153WFBGA |
|
CY7C1021CV33-15VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
RMLV1616AGSD-5S2#AC0Renesas Electronics America |
IC SRAM 16MBIT PAR 52TSOP II |
|
CY7C1418BV18-267BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
PC28F128P33B85AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
IS25LQ032B-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
24LC64T-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
S30MS01GR25TFW010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
IS61NLP51236-200B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |