类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC56XT/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
W25Q64JVDAIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8DIP |
|
AT45DB041B-CIRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 20MHZ 14CBGA |
|
MT46H32M16LFBF-6 AIT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
M34C02-RMB6TGSTMicroelectronics |
IC EEPROM 2KBIT I2C 8UFDFPN |
|
AT93C46-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CY7C1354C-200AXITCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS45S16800E-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AS4C64M16D3L-12BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
IS42VS16100C1-10TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IS43TR82560BL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
AT25640AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20MHZ 8MAP |
|
MT29F256G08CKCABH2-10Z:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |