English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR2-S4 |
| 内存大小: | 1Gb (32M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.95V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 134-TFBGA |
| 供应商设备包: | 134-TFBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT34C02-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
S34ML02G104BHB010SkyHigh Memory Limited |
IC FLASH 2G PARALLEL |
|
70V24L20PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
W25Q32FVTBIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
MT47H128M8HQ-3:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
AS4C32M16D2-25BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
NM27C020V120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
70261S55PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
71342LA45J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS43TR16256B-093NBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
71421SA20PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
7134SA20J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
AS4C128M8D2-25BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
