类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 256Kb (16K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 128-LQFP |
供应商设备包: | 128-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C128M16D3A-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
IS29GL256S-10DHV02-TRCypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT46V64M4FG-5B:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
MT46H64M16LFBF-5 AAT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
IS42S16160D-75EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
MR44V064AMAZAABROHM Semiconductor |
IC FRAM 64KBIT I2C 3.4MHZ 8SOP |
|
M95256-WBN6STMicroelectronics |
IC EEPROM 256KBIT SPI 10MHZ 8DIP |
|
MT29F64G08CBCGBWP-BES:GMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
W25X20BVSNIGWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8SOIC |
|
AT25640B-XPDGV-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 5MHZ 8TSSOP |
|
AT49F002N-12VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
7007S35PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
MT42L16M32D1AC-25 AIT:AMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |