English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 4Gb (128M x 32) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 125°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61NLP25618A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT46V32M16BN-6:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71V416VS10PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V424S12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43QR16256A-093PBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
PC28F640P33B85B TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
MT46V128M4FN-75:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S25FL164K0XBHI033Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IS61VPD102418A-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
AS4C512M8D3B-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CAT25C256LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 5MHZ 8DIP |
|
AT49BV001NT-12TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT24C16N-10SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
