English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 4Gb (512M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 63-VFBGA |
| 供应商设备包: | 63-VFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT42L16M32D1AC-25 AAT:A TRMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
R1LV0108ESA-5SI#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
71V35761S166BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT27C010L-12PCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32DIP |
|
71342LA70J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
W25Q32FWSSIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
IDT71V3557SA85BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT28F128J3FS-12 ET TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT27C512R-90JIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
M29W160ET70ZA6EMicron Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
MT48LC8M32B2B5-7Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
NAND256W3A2BN6FSTMicroelectronics |
IC FLASH 256MBIT PARALLEL 48TSOP |
|
N25Q256A83ESFA0F TRMicron Technology |
IC FLASH 256MBIT SPI 108MHZ 16SO |
