English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W25Q16FWSSIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S25FL132K0XNFV040Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8USON |
|
CY7C1911KV18-250BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S25FL032P0XNFI003MCypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MT48LC16M4A2TG-7E:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
IS43DR86400D-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
CAT28C256H13I15TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PAR 28TSOP |
|
S34ML02G200TFV000SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 48TSOP I |
|
W631GG6KB-12Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
AT24C02AN-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
DS1250W-100INDMaxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
SST39WF1601-70-4I-MBQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
IDT71V016SA15Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
