类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 50µs |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.488", 12.40mm Width) |
供应商设备包: | 32-VSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B101Q1A-SXITCypress Semiconductor |
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC |
|
IS42SM16160D-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
70261L35PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
PC28F512P30BF0Micron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
IDT71V632S5PFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
AT93C46A-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
MT46H32M32LFMA-5 IT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 168WFBGA |
|
W25Q64JVZEJQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
NM93CS06ENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256B SPI 1MHZ 8DIP |
|
MT29F64G08CBABAWP-IT:BMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
AT21CS01-STUM15-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ SOT23 |
|
7008S35J8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
7142LA25JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |