类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 5µs, 2.5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7025L20PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
W25Q128FVCIG TRWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
PC28F128P33T85B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
IDT71256SA12Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
7134SA55J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS25LQ010B-JDLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT SPI/QUAD 8TSSOP |
|
SST26VF016BT-104I/SM70SVAORoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |
|
IDT71V016SA12Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
MT29F64G08AECDBJ4-6:DMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
IS62WV25616DALL-55TI -TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT28F800B3SG-9 B TRMicron Technology |
IC FLASH 8MBIT PARALLEL 44SOP |
|
7142LA100JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
7133LA25PFI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |