类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 120 ns |
电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F256G08CJAAAWP-IT:AMicron Technology |
IC FLASH 256GBIT PAR 48TSOP I |
|
IDT71T75902S85PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CAT28LV64GI25Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
24LC04B-I/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
AT27C256R-90JCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT25DF041A-SSHF-BAdesto Technologies |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
MT46V32M16FN-5B:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS61VPD102418A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
MT47H32M16BN-37E:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
93LC76A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
IS46TR16640A-125JBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT25010AN-10SU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8SOIC |
|
AT28C17-20PIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28DIP |