English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 52-LCC (J-Lead) |
| 供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F32G08CBCDBJ4-10:DMicron Technology |
IC FLASH 32GBIT PARALLEL 132VBGA |
|
7130SA20JRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
FT24C04A-ETR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
CY7C1021B-15ZXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS43TR85120BL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
MT40A512M16JY-083E:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
W25P16VSFIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 50MHZ 16SOIC |
|
IS42RM16200C-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
AT29LV512-12TU-TRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
STK14C88-3WF35Cypress Semiconductor |
IC NVSRAM 256KBIT PARALLEL 32DIP |
|
W25Q32FVTBJQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
W632GG6KB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
S34MS01G204BHA013SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
