English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 16Gb (512M x 32) |
| 内存接口: | - |
| 时钟频率: | 2.133 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS41C16256C-35TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4MBIT PARALLEL 40TSOP |
|
7026S25J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
IS62WV25616DALL-55BI -TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
IS42S16320B-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
IS42S81600E-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
S25FL129P0XBHIY10Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
AT24C256N-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |
|
IS45S32200E-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
W25Q256FVEIF TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
S25FL116K0XNFV010Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
M29W256GL70N6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
S29JL032J60BHI310Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
MTFC4GMVEA-WTMicron Technology |
IC FLASH 32GBIT MMC 153WFBGA |
