English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48H8M32LFF5-10Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT28F008B5VG-8 BMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
AT25020AN-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |
|
AT93C57-10SCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT29F1G08ABADAWP-ITE:DMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
PC28F128P33T85DMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
MT48LC32M8A2TG-7E L:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
DS1265AB-70INDMaxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
IS42RM16160D-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IDT71V3556S166BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT27C512R-70PIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
AT24C512W1-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 20SOIC |
|
N25Q032A13ESEC0GMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8SO W |
