类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43DR16160A-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
AT24HC02B-PURoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
S25FL129P0XBHIZ10Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IDT71256TTSA12Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IDT6116LA45SOIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
IS45S16100E-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
709349L6PFGRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
IDT709199L9PFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
MT48LC8M32B2P-6 TRMicron Technology |
IC DRAM 256MBIT PAR 86TSOP II |
|
7025S55PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IDT71V3557SA80BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT45DB081B-CNURoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 20MHZ 8CASON |
|
MT46V32M4P-6T:DMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |