类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C136E-25JXCTCypress Semiconductor |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS42S32160B-75BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |
|
AT27C256R-15RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
PC28F128P33T85AMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
IDT71256SA12YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
70V34L20PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
W25X80VZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 75MHZ 8WSON |
|
MT29E1HT08EMHBBJ4-3:BMicron Technology |
IC FLASH 1.5T PARALLEL 132VBGA |
|
IDT71V65603S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT29BV020-25TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
IDT71V3559S80PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71V3556S100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
W948D6FBHX6IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |