English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 5 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-UFDFN Exposed Pad |
| 供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49BV040-12JCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
AT29BV040A-25TCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
MT29F8G08MADWC:D TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP |
|
7025S55JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
IS46TR16128B-15HBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IDT71V416VS15YG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
M58BW16FB5ZA3F TRMicron Technology |
IC FLASH 16MBIT PARALLEL 80LBGA |
|
AS4C512M8D3L-12BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT49BV322A-70TIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IDT71V2558S133BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16400F-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
IDT6116LA35SORenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
AS4C64M16D3LA-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
