类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (1M x 72) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 209-BGA |
供应商设备包: | 209-FBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32JVXGJQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8XSON |
|
AT45DB081B-TI-2.5Roving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 15MHZ 28TSOP |
|
S29GL256P10FFIS12Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IS42S16800D-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT25128B-MAPDGV-ERoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 5MHZ 8UDFN |
|
IDT71P72604S200BQIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
7054S25PRFIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 128TQFP |
|
MT47H256M4BT-3:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
S34ML02G104BHI010SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
CY14ME064Q1B-SXITCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
24FC256T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DFN |
|
CY7C1041B-15ZCCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS62WV5128BLL-55BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |